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Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 7, 页码: 077203
Authors:  Cao, YF;  Cai, KM;  Li, LJ;  Lu, WJ;  Sun, YP;  Wang, KY
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Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 067202
Authors:  Luo, WG;  Wang, HF;  Cai, KM;  Han, WP;  Tan, PH;  Hu, PA;  Wang, KY
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Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2014, 卷号: 57, 期号: 8, 页码: 1471-1475
Authors:  Cao, YF;  Li, YY;  Wei, GN;  Ji, Y;  Wang, KY
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Interfacial electronic structure-modulated magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 9, 页码: 092402
Authors:  Chen, X;  Wang, KY;  Wu, ZL;  Jiang, SL;  Yang, G;  Liu, Y;  Teng, J;  Yu, GH
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Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) thin films 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 2, 页码: 22502
Authors:  Wadley P;  Casiraghi A;  Wang M;  Edmonds KW;  Campion RP;  Rushforth AW;  Gallagher BL;  Staddon CR;  Wang KY;  van der Laan G;  Arenholz E;  Edmonds, KW (reprint author), Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, Englandkevin.edmonds@nottingham.ac.uk
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Circular-dichroism  Absorption  
Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films 期刊论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 卷号: 322, 期号: 21, 页码: 3250-3254
Authors:  Chen L (Chen L.);  Yan S (Yan S.);  Xu PF (Xu P. F.);  Lu J (Lu J.);  Deng JJ (Deng J. J.);  Ji Y (Ji Y.);  Wang KY (Wang K. Y.);  Zhao JH (Zhao J. H.)
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Magnetic Semiconductor  Magnetic Anisotropy  Magneto-transport Phenomenon  Molecular-beam Epitaxy  
Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning 期刊论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 卷号: 322, 期号: 21, 页码: 3481-3484
Authors:  Wang KY (Wang K. Y.);  Edmonds KW (Edmonds K. W.);  Irvine AC (Irvine A. C.);  Wunderlich J (Wunderlich J.);  Olejnik K (Olejnik K.);  Rushforth AW (Rushforth A. W.);  Campion RP (Campion R. P.);  Williams DA (Williams D. A.);  Foxon CT (Foxon C. T.);  Gallagher BL (Gallagher B. L.)
Adobe PDF(298Kb)  |  Favorite  |  View/Download:986/360  |  Submit date:2010/09/07
Domain Wall Resistance  Pinning  Dependence  
Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 26, 页码: Article no.262102
Authors:  Wang KY;  Edmonds KW;  Irvine AC;  Tatara G;  De Ranieri E;  Wunderlich J;  Olejnik K;  Rushforth AW;  Campion RP;  Williams DA;  Foxon CT;  Gallagher BL;  Wang, KY, CAS, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. kywang@semi.ac.cn
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Mn)As  (Ga  
Intrasubband and intersubband transitions in GaAs/AlxGa1-xAs multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 16, 页码: Art.No.162111
Authors:  Li, JM (Li, J. M.);  Qian, KY (Qian, K. Y.);  Zhu, QS (Zhu, Q. S.);  Wang, ZG (Wang, Z. G.);  Li, JM, Tsing Hua Univ, Grad Sch Shenzhen, Semicond Lighting Lab, Shenzhen 518055, Peoples R China. 电子邮箱地址: jiemli@red.semi.ac.cn
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Infrared Photodetectors