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GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 33, 页码: 335102
Authors:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y;  Wang LJ;  Yu Y;  Ni HQ;  Xu YQ;  Niu ZC;  He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
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1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range  
InGaAs(Sb)/GaAs异变低维材料长波长激光器 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  王海莉
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分子束外延  异变  Ingaas量子阱  Inas量子点  激光器  
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 2, 页码: 335-341
Authors:  Shang XJ;  He JF;  Wang HL;  Li MF;  Zhu Y;  Niu ZC;  Fu Y;  Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn;  fyg@theochem.kth.se
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Intermediate-band  Transitions  
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang F (Zhang Feng);  Sun GS (Sun Guosheng);  Huang HL (Huang Huolin);  Wu ZY (Wu Zhengyun);  Wang L (Wang Lei);  Zhao WS (Zhao Wanshun);  Liu XF (Liu Xingfang);  Yan GG (Yan Guoguo);  Zheng L (Zheng Liu);  Dong L (Dong Lin);  Zeng YP (Zeng Yiping)
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Controllable Growth of Highly Ordered ZnO Nanorod Arrays via Inverted Self-Assembled Monolayer Template 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2011, 卷号: 3, 期号: 11, 页码: 4388-4395
Authors:  Dong JJ (Dong J. J.);  Zhang XW (Zhang X. W.);  Yin ZG (Yin Z. G.);  Zhang SG (Zhang S. G.);  Wang JX (Wang J. X.);  Tan HR (Tan H. R.);  Gao Y (Gao Y.);  Si FT (Si F. T.);  Gao HL (Gao H. L.)
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An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 11, 页码: 114207
Authors:  Shao YB (Shao Yong-Bo);  Zhao LJ (Zhao Ling-Juan);  Yu HY (Yu Hong-Yan);  Qiu JF (Qiu Ji-Fang);  Qiu YP (Qiu Ying-Ping);  Pan JQ (Pan Jiao-Qing);  Wang BJ (Wang Bao-Jun);  Zhu HL (Zhu Hong-Liang);  Wang W (Wang Wei)
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Influence Factors of an All-Optical Recovered Clock from Two-Section DFB Lasers 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 9, 页码: 94209
Authors:  Kong DH;  Zhu HL;  Liang S;  Wang BJ;  Bian J;  Ma L;  Yu WK;  Lou CY;  Kong, DH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, kdh@semi.ac.cn
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Feedback Laser  
Temperature performance of the edge emitting transistor laser 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 1, 页码: 13503
Authors:  Liang S;  Zhu HL;  Kong DH;  Niu B;  Zhao LJ;  Wang W;  Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China, liangsong@semi.ac.cn
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Heterostructure Laser  Bipolar-transistor  Operation  Integration  
Research status of electro-absorption modulated lasers 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES V 丛书: Proceedings of SPIE 卷: 7987, Shanghai, 2010
Authors:  Zhu HL;  Liang S;  Zhao LJ;  Kong DH;  Wang W
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InP-based deep-ridge NPN transistor laser 期刊论文
OPTICS LETTERS, 2011, 卷号: 36, 期号: 16, 页码: 3206-3208
Authors:  Liang S;  Kong DH;  Zhu HL;  Zhao LJ;  Pan JQ;  Wang W;  Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China. liangsong@semi.ac.cn
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Operation  Epitaxy