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Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Xiu XQ;  Li Y;  Fu DY;  Lu H;  Chen P;  Han P;  Zheng YD;  Tang CG;  Chen YH;  Wang ZG;  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Zhang Z Nanjing Univ Jiangsu Prov Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Dislocation  Carrier Origination  Localization