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1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
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Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power 期刊论文
Chinese Optics Letters, 2006, 卷号: 4, 期号: 7, 页码: 413-415
Authors:  Qin Han;  Zhichuan Niu;  Haiqiao Ni;  Shiyong Zhang;  Xiaohong Yang;  Yun Du;  Cunzhu Tong;  Huan Zhao;  Yingqiang Xu;  Hongling Peng;  Ronghan Wu
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1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
Authors:  Niu Zhichuan;  Ni Haiqiao;  Fang Zhidan;  Gong Zheng;  Zhang Shiyong;  Wu Donghai;  Sun Zheng;  Zhao Huan;  Peng Hongling;  Han Qin;  Wu Ronghan
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