SEMI OpenIR

Browse/Search Results:  1-6 of 6 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
Adobe PDF(911Kb)  |  Favorite  |  View/Download:7/0  |  Submit date:2020/07/30
Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
Adobe PDF(911Kb)  |  Favorite  |  View/Download:6/0  |  Submit date:2020/07/30
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 444-447
Authors:  Hongjuan Wang;   Xiangwei Jiang ;   Member, IEEE ;   Nuo Xu;   Member, IEEE ;   Genquan Han ;   Member, IEEE ;   Yue Hao;   Senior Member, IEEE ;   Shu-Shen Li;   David Esseni;   Fellow, IEEE
Adobe PDF(1088Kb)  |  Favorite  |  View/Download:73/0  |  Submit date:2019/11/18
Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain 期刊论文
AIP ADVANCES, 2015, 卷号: 5, 页码: 057145
Authors:  Genquan Han;  Yibo Wang;  Yan Liu;  Hongjuan Wang;  Mingshan Liu;  Chunfu Zhang;  Jincheng Zhang;  Buwen Cheng;  Yue Hao
Adobe PDF(1885Kb)  |  Favorite  |  View/Download:262/1  |  Submit date:2016/03/22
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 11, 页码: 115027
Authors:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
Adobe PDF(629Kb)  |  Favorite  |  View/Download:403/133  |  Submit date:2015/03/19
Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Authors:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
Adobe PDF(997Kb)  |  Favorite  |  View/Download:411/97  |  Submit date:2015/03/20