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Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
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Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
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Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 4, 页码: 1985-1989
Authors:  Hongjuan Wang ;   Genquan Han ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Yan Liu ;   Jincheng Zhang;   Yue Hao;   Senior Member,IEEE
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Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 444-447
Authors:  Hongjuan Wang;   Xiangwei Jiang ;   Member, IEEE ;   Nuo Xu;   Member, IEEE ;   Genquan Han ;   Member, IEEE ;   Yue Hao;   Senior Member, IEEE ;   Shu-Shen Li;   David Esseni;   Fellow, IEEE
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Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: 56, 期号: 4, 页码: 04CD07
Authors:  Hongjuan Wang;  Genquan Han;  Xiangwei Jiang;  Yan Liu;  Chunfu Zhang;  Jincheng Zhang;  and Yue Hao
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Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain 期刊论文
AIP ADVANCES, 2015, 卷号: 5, 页码: 057145
Authors:  Genquan Han;  Yibo Wang;  Yan Liu;  Hongjuan Wang;  Mingshan Liu;  Chunfu Zhang;  Jincheng Zhang;  Buwen Cheng;  Yue Hao
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Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文
International Journal of Thermophysics, 2015, 卷号: 36, 页码: 980–986
Authors:  Yan Liu;  Jing Yan;  Hongjuan Wang;  Buwen Cheng;  Genquan Han
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Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 11, 页码: 115027
Authors:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
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Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Authors:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
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自寻优模糊集的自调整模糊控制器及通用模糊控制器的硬件实现 期刊论文
电子学报, 1993, 卷号: 21, 期号: 8, 页码: 82
Authors:  冯宏娟;  王守觉
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