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Fabrication and characterization of an SOI MEMS gyroscope 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 6, 页码: 064004
Authors:  Zhong Weiwei;  Han Guowei;  Si Chaowei;  Ning Jin;  Yang Fuhua
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Low temperature Sn-rich Au - Sn wafer-level bonding 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 106001
Authors:  Zhiqiang, Fang;  Xu, Mao;  Jinling, Yang;  Fuhua, Yang
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Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 4, 页码: 045006
Authors:  Han, Guowei;  Si, Chaowei;  Ning, Jin;  Zhong, Weiwei;  Sun, Guosheng;  Zhao, Yongmei;  Yang, Fuhua
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Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 6, 页码: 064005
Authors:  Yan, Wei;  Zhang, Renping;  Du, Yandong;  Han, Weihua;  Yang, Fuhua
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Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Authors:  Zhang, Yanbo;  Du, Yandong;  Xiong, Ying;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua,;  Han, W.(
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Carrier Concentration  Electric Fields  Fins(Heat Exchange)  
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Authors:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(
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Aspect Ratio  Current Density  Drain Current  Electric Network Analysis  Electric Network Analyzers  Electron Mobility  Fabrication  Gallium Nitride  Ohmic Contacts  Passivation  Silicon Nitride  Silicon Wafers  
An efficient dose-compensation method for proximity effect correction 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 86001-1-86001-4
Authors:  Wang Ying;  Han Weihua;  Yang Xiang;  Zhang Renping;  Zhang Yang;  Yang Fuhua
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Optimization of grid design for solar cells 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 42-45
Authors:  Liu Wen;  Li Yueqiang;  Chen Jianjun;  Chen Yanling;  Wang Xiaodong;  Yang Fuhua
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Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 9, 页码: 94009-1-94009-4
Authors:  Ji Xiaoli;  Yang Fuhua;  Wang Junxi;  Duan Ruifei;  Ding Kai;  Zeng Yiping;  Wang Guohong;  Li Jinmin
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