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Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1344/307  |  提交时间：2010/11/15
Stress  Growth  
Structural properties of SI-GaAs grown in space 会议论文
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10), NAGOYA, JAPAN, JUL 12-19, 1998
作者:  Chen NF;  Wang YT;  Zhong XR;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：921/0  |  提交时间：2010/11/15
Semiinsulating Gallium-arsenide  Microgravity  Stoichiometry  
The effects of carbonized buffer layer on the growth of SiC on Si 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Wang YS;  Li JM;  Zhang FF;  Lin LY;  Wang YS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1076/244  |  提交时间：2010/11/15
Heteroepitaxial Growth  Hydrocarbon Radicals  Si(001) Surface  Beam  
Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr) 会议论文
MAGNETISM, MAGNETIC MATERIALS AND THEIR APPLICATIONS, 302-3, SAO PAULO, BRAZIL, JUN 07-11, 1998
作者:  Han XF;  Lin LY;  Baggio-Saitovitch E;  Xu RG;  Wang XH;  Pan HG;  Han XF Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(391Kb)  |  收藏  |  浏览/下载：1160/161  |  提交时间：2010/11/15
Magnetic Properties  Hydride  Hydrogenation  Saturation Magnetization  Curie Temperature  First-order Magnetization Process  R3fe29-xtxhy  r = y  
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu XF;  Liu JP;  Li JP;  Wang YT;  Li LY;  Sun DZ;  Kong MY;  Lin LY;  Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
收藏  |  浏览/下载：913/0  |  提交时间：2010/11/15
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