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Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Peng CS;  Chen H;  Zhao ZY;  Li JH;  Dai DY;  Huang Q;  Zhou JM;  Zhang YH;  Tung CH;  Sheng TT;  Wang J;  Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1470/311  |  提交时间：2010/11/15
Threading Dislocation  Si(100)  Layers  Films  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1440/239  |  提交时间：2010/11/15
Double Multi-quantum Wells  Photocurrent Spectra  Zncdse-znse  Spectroscopy  Photoluminescence  Heterostructures  Photodetectors