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Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
Adobe PDF(1050Kb)  |  Favorite  |  View/Download:814/116  |  Submit date:2012/01/06
Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:  Ning JQ (Ning J. Q.);  Xu SJ (Xu S. J.);  Wei ZF (Wei Z. F.);  Ruan XZ (Ruan X. Z.);  Ji Y (Ji Yang);  Zheng HZ (Zheng H. Z.);  Liu HC (Liu H. C.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
Adobe PDF(305Kb)  |  Favorite  |  View/Download:1524/536  |  Submit date:2010/12/05
Optical Kerr Effect  Electron Spin  Quantum Disks  Inas/gaas  Refractive-index  Coherence  Gaas  Semiconductors