SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-5 of 5 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
制备绝缘体上锗硅薄膜材料的方法 专利
专利类型: 发明, 申请日期: 2006-05-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘超;  高兴国;  李建平;  曾一平
Adobe PDF(370Kb)  |  Favorite  |  View/Download:795/176  |  Submit date:2009/06/11
In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
Authors:  Gao F;  Huang DD;  Li JP;  Liu C;  Gao, F, Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Peoples R China. 电子邮箱地址: feigao@snnu.edu.cn
Adobe PDF(184Kb)  |  Favorite  |  View/Download:880/313  |  Submit date:2010/03/17
Doping  
硅基微电子新材料SGOI薄膜研究进展 期刊论文
微电子学, 2005, 卷号: 35, 期号: 1, 页码: 76-80
Authors:  高兴国;  刘超;  李建平;  曾一平;  李晋闽
Adobe PDF(578Kb)  |  Favorite  |  View/Download:1001/240  |  Submit date:2010/11/23
GSMBE外延生长SGOI材料的退火行为 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1149-1153
Authors:  刘超;  高兴国;  李建平;  曾一平;  李晋闽
Adobe PDF(378Kb)  |  Favorite  |  View/Download:987/406  |  Submit date:2010/11/23
GSMBE生长SiGe/Si材料的原位掺杂控制技术 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 142-144
Authors:  黄大定;  刘超;  李建平;  高斐;  孙殿照;  朱世荣;  孔梅影
Adobe PDF(295Kb)  |  Favorite  |  View/Download:998/281  |  Submit date:2010/11/23