SEMI OpenIR

浏览/检索结果: 共6条,第1-6条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
High resolution interrogation technique based on linear photodiode array spectrometer for fiber Bragg grating Sensors - art. no. 65952C 会议论文
Fundamental Problems of Optoelectronics and Microelectronics III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Harbin, PEOPLES R CHINA, SEP 12-14, 2006
作者:  Zhang, SW (Zhang, Songwei);  Liu, YH (Liu, Yuhang);  Li, F (Li, Fang);  Zhang, SW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载:1574/488  |  提交时间:2010/03/29
Fiber Bragg Grating Sensor  Interrogation Technique  System  
Design of spectrometer based on volume phase grating for near infrared range 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Li F;  Xin HL;  Cao P;  Liu YL;  Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载:1277/297  |  提交时间:2010/10/29
Spectrometer  Volume Phase Grating  Optical Design  Resolution  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载:1354/283  |  提交时间:2010/10/29
Luminescence  Localization  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载:1388/272  |  提交时间:2010/10/29
Lasers  Gain  Gaas  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载:1144/261  |  提交时间:2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn  
Structural and photoelectric studies on double barrier quantum well infrared detectors 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Wu WG;  Jiang DS;  Cui LQ;  Song CY;  Zhuang Y;  Wu WG Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载:1169/234  |  提交时间:2010/11/15