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Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)  |  收藏  |  浏览/下载：1740/419  |  提交时间：2010/11/15
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
The SPER and characteristics of Si1-yCy alloys 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu Z;  Yu JZ;  Cheng BW;  Lei ZL;  Li DZ;  Wang QM;  Liang JW;  Yu Z Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1278/206  |  提交时间：2010/10/29
Si1-ycy Alloys  Ion implantatIon  Solid Phase Epitaxy Recrystallization