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Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1271/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1392/249  |  提交时间：2010/11/15
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