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Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:  Luo XH;  Wang RM;  Zhang XP;  Zhang HZ;  Yu DP;  Luo MC;  Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)  |  收藏  |  浏览/下载：1423/365  |  提交时间：2010/10/29
Transmission Electron Microscopy  Electron Energy Loss Spectroscopy  Molecular Beam Epitaxy  Gallium Nitride  Chemical-vapor-deposition  Epitaxy  Layer  
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Xin HL;  Li F;  Cao P;  He YJ;  Chen P;  Liu YL;  Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)  |  收藏  |  浏览/下载：1239/196  |  提交时间：2010/10/29
Ocpm  Vphg  Incident Angle  Tolerance