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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：2025/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Characterization of high-speed optoelectronics devices based optical and electrical spectra analyses - art. no. 68380Q 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Wen, JM;  Zhu, NH;  Zhang, T;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(560Kb)  |  收藏  |  浏览/下载：1468/401  |  提交时间：2010/03/09
Frequency Response  Additional Modulation  Modulation Index  Chirp Parameters  Optical And Electrical Spectra Analyses