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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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收录类别:CPCI\-S
语种:英语
专题:中国科学院半导体研究所(2009年前)
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Self-assembled GaAs quantum rings by MBE droplet epitaxy
会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:
Huang, SS (Huang, Shesong)
;
Niu, ZC (Niu, Zhichuan)
;
Xia, JB (Xia, Jianbai)
;
Huang, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
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浏览/下载:1532/216
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提交时间:2010/03/29
Quantum Single Rings
Concentric Quantum Double Rings
Coupled Concentric Quantum Double Ring
Droplet Epitaxy
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
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浏览/下载:1728/341
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提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
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浏览/下载:1658/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1789/615
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提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)
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浏览/下载:1991/347
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提交时间:2010/03/29
Molecular-beam Epitaxy
2-dimensional Electron-gas
Bulk Gan
Optimization
Layers
Hemts
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
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浏览/下载:1358/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
Surface morphology evolution of strained InAs/GaAs(331)a films
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Gong, M (Gong, Meng)
;
Fang, ZD (Fang, Zhidan)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)
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浏览/下载:1425/288
  |  
提交时间:2010/03/29
Surface Morphology Evolution
Inas Nanostructures
Island-pit Pairs
Molecular-beam Epitaxy
Quantum Dots
Cooperative Nucleation
Heteroepitaxy
Transition
Islands
Growth
Research on the band-gap of InN grown on siticon substrates
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Xiao, HL
;
Wang, XL
;
Wang, JX
;
Zhang, NH
;
Liu, HX
;
Zeng, YP
;
Li, JM
;
Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)
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收藏
  |  
浏览/下载:1491/408
  |  
提交时间:2010/03/29
Molecular-beam Epitaxy
Wurtzite Inn
Nitride
Absorption
Alloys
Films
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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  |  
浏览/下载:1844/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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  |  
浏览/下载:1730/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m