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Research on SOI-based micro-resonator devices 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7847, Beijing, PEOPLES R CHINA, OCT 18-20, 2010
作者:  Xiao X (Xiao Xi);  Xu HH (Xu Haihua);  Hu YT (Hu Yingtao);  Zhou LA (Zhou Liang);  Xiong K (Xiong Kang);  Li ZY (Li Zhiyong);  Li YT (Li Yuntao);  Fan ZC (Fan Zhongchao);  Han WH (Han Weihua);  Yu YD (Yu Yude);  Yu JZ (Yu Jinzhong)
Adobe PDF(8983Kb)  |  收藏  |  浏览/下载：1787/354  |  提交时间：2011/07/14
High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Huang, QZ;  Yu, JZ;  Chen, SW;  Xu, XJ;  Han, WH;  Fan, ZC;  Huang, QZ, Chinese Acad Sci, Inst Semicond, Natl Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(324Kb)  |  收藏  |  浏览/下载：1837/571  |  提交时间：2010/03/09
Resonator  Silicon-on-insulator  Quality Factor  Propagation Loss  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Jiang, DS;  Qu, YH;  Ni, HQ;  Wu, DH;  Xu, YQ;  Niu, ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1818/365  |  提交时间：2010/03/29
Molecular Beam Epitaxy  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1755/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Beijing, PEOPLES R CHINA, JUN 04-06, 2007
作者:  Wu, BP;  Wu, DH;  Xiong, YH;  Huang, SS;  Ni, HQ;  Xu, YQ;  Niu, ZC;  Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：1628/293  |  提交时间：2010/03/09
Inas Quantum Dots