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16-channel VCSEL based multiple chip modules 会议论文
2002 DIGEST OF THE LEOS SUMMER TOPICAL MEETINGS, MT TREMBLANT, CANADA, JUL 15-17, 2002
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Shen RX;  Du Y;  Huang YZ;  Wu RH;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(146Kb)  |  收藏  |  浏览/下载：2142/366  |  提交时间：2010/10/29
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载：1334/174  |  提交时间：2010/11/15
Inp(001)  Epitaxy  Gaas  
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Ye XL;  Chen YH;  Xu B;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1201/220  |  提交时间：2010/11/15
Reflectance-difference Spectroscopy  Indium Segregation  Ingaas/gaas Quantum Wells  Epitaxy-grown Ingaas/gaas  Surface Segregation  Interface  
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Kang JY;  Shen YW;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1297/238  |  提交时间：2010/11/15
Defects  Gan  Photoluminescence  Electronic Structures  Yellow Luminescence  Epitaxial-films  Mg