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Picosecond timing synchronization control signal for 3D range-gated imaging 会议论文
Proceedings of SPIE 卷: 8192 文献号: 81920O, Beijing, PEOPLES R CHINA, 2011
作者:  Yang JB (Yang Jinbao);  Zhou Y (Zhou Yan);  Fan ST (Fan Songtao);  Wang XW (Wang Xinwei)
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：2600/827  |  提交时间：2011/12/13
Range-gated  Picosecond  Timing Control  Fpga  Delay Line  
Flash Trajectory Imaging of Target 3D Motion 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7864: Art. No. 786409, San Francisco, CA, JAN 24-27, 2011
作者:  Wang XW (Wang Xinwei);  Zhou Y (Zhou Yan);  Fan ST (Fan Songtao);  He J (He Jun);  Liu YL (Liu Yuliang)
Adobe PDF(324Kb)  |  收藏  |  浏览/下载：1932/575  |  提交时间：2011/07/17
Surveillance Photonic Fence Based on Active Range-gated Imaging for Night Intrusion Detection 会议论文
Proceedings of SPIE 卷: 8192 文献号: 819218, Beijing, PEOPLES R CHINA, 2011
作者:  Wang XW (Wang Xinwei);  Zhou Y (Zhou Yan);  He J (He Jun);  Fan ST (Fan Songtao);  Liu YL (Liu Yuliang)
Adobe PDF(778Kb)  |  收藏  |  浏览/下载：2355/651  |  提交时间：2011/12/13
Surveillance Photonic Fence  Intrusion Detection  Range-gated Imaging  
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Zeng, XB;  Liao, XB;  Dai, ST;  Wang, B;  Xu, YY;  Xiang, XB;  Hu, ZH;  Diao, HW;  Kong, GL;  Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)  |  收藏  |  浏览/下载：1733/241  |  提交时间：2010/03/29
Chemical Vapor Deposition Processes  Nanomaterials  Semiconducting Silicon  Visible Photoluminescence  Porous Silicon  Amorphous-silicon  Si  Spectroscopy  Films  Nanostructures  Confinement  Growth  
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938, SAN JOSE, CA, JAN 26-27, 2000
作者:  Wang GH;  Ma XY;  Zhang YF;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1085/0  |  提交时间：2010/10/29
Native Oxided Alas  Current Blocking Layer  Algainp  High Brightness Light Emitting Diodes  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1221/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1358/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1410/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp  
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Lian P;  Wang LM;  Zhang XY;  Yang YL;  Zhang HQ;  Wang GH;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1277/275  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang LM;  Yang YL;  Zhang HQ;  Zhang XY;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1236/250  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  Dvd