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Growth and photoluminescence of InAlGaN films 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang ZG;  Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1391/347  |  提交时间：2010/10/29
Multiple-quantum Wells  Quaternary Alloys  Optical-properties  
Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zeng XB;  Liao XB;  Diao HW;  Hu ZH;  Xu YY;  Zhang SB;  Chen CY;  Chen WD;  Kong GL;  Zeng XB Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(683Kb)  |  收藏  |  浏览/下载：1511/333  |  提交时间：2010/10/29
Laser-ablation  Semiconductor Nanowires  Growth  Mechanism  Evaporation  Diameter  Wires  
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang QY;  Wang JH;  Deng HF;  Lin LY;  Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)  |  收藏  |  浏览/下载：1775/328  |  提交时间：2010/11/15
Neutron Irradiation  Annealing  Defects In Silicon  Spectra