Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition
Zeng XB; Liao XB; Diao HW; Hu ZH; Xu YY; Zhang SB; Chen CY; Chen WD; Kong GL; Zeng XB Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China.
2003
会议名称Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting
会议录名称QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737
页码667-672
会议日期DEC 02, 2001-DEC 05, 2002
会议地点BOSTON, MA
出版地506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者MATERIALS RESEARCH SOCIETY
ISSN0272-9172
ISBN1-55899-674-5
部门归属chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china
摘要Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.
关键词Laser-ablation Semiconductor Nanowires Growth Mechanism Evaporation Diameter Wires
学科领域半导体材料
主办者Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13621
专题中国科学院半导体研究所(2009年前)
通讯作者Zeng XB Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China.
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Zeng XB,Liao XB,Diao HW,et al. Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:667-672.
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