中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

限定条件                        
已选(0)清除 条数/页：   排序方式：
Design and fabrication of GaAs OMIST photodetector 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Kang XJ;  Lin SM;  Liao QW;  Gao JH;  Liu SA;  Cheng P;  Wang HJ;  Zhang CH;  Wang QM;  Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1671/479  |  提交时间：2010/10/29
Photodetector  Oxidation  Materials Growth  
A study on GaP/Si heterostructures grown by GS-MBE 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu JZ;  Chen BW;  Yu Z;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(243Kb)  |  收藏  |  浏览/下载：1082/241  |  提交时间：2010/10/29
Gap/si Heterostructure  Gs-mbe  Lattice Match  X-ray Double Crystal Diffraction  Photoluminescence (Pl)  
Preparation and photoluminescence of nc-Si/SiO2 MQW 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Cheng BW;  Yu JZ;  Yu Z;  Lei ZL;  Li DZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(416Kb)  |  收藏  |  浏览/下载：1329/350  |  提交时间：2010/10/29
Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Si JJ;  Yang QQ;  Wang HJ;  Wang QM;  Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1172/189  |  提交时间：2010/10/29
Si/sige  Quantum Dot  Electroluminescence  Photoluminescence