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The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Xin HL;  Chen P;  Li F;  Wang CX;  Cao P;  Liu YL;  Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1321/255  |  提交时间：2010/03/29
A low power consumption thermo-optic variable optical attenuator based on SOI material 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Fang, Q;  Li, F;  Wang, CX;  Xin, HL;  Liu, YL;  Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1140/240  |  提交时间：2010/03/29
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(519Kb)  |  收藏  |  浏览/下载：1330/244  |  提交时间：2010/03/29
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang, QY;  Shen, WJ;  Wang, J;  Wang, JH;  Zeng, YP;  Li, JM;  Wang, QY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1307/210  |  提交时间：2010/03/29
Ultraviolet-laser Emission  Thin-films  Zinc-oxide  Room-temperature  
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1713/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL;  Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1712/231  |  提交时间：2010/03/29
Fluorine  Simox  Charge Trapping  Radiation  Sio2  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1416/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd