Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET
	Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K; Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2004
会议名称	7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称	2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码	VOLS 1- 3 PROCEEDINGS: 277-278
会议日期	OCT 18-21, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8511-X
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The mobility of channel electron, for partially depleted Sol nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in tern-is of a "lubricant" model. Mien fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the Sol wafers processed by the implantation of fluorine. The causes of all the above results are discussed.
学科领域	微电子学
主办者	Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10084
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zheng, ZS,Liu, ZL,Zhang, GQ,et al. Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 277-278.

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