Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers
	Zhuang QD; Li JM; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY; Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	40th Electronic Materials Conference (EMC-40)
会议录名称	JOURNAL OF ELECTRONIC MATERIALS, 28 (5)
页码	503-505
会议日期	JUN 24-26, 1998
会议地点	CHARLOTTESVILLE, VIRGINIA
出版地	420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA
出版者	MINERALS METALS MATERIALS SOC
ISSN	0361-5235
部门归属	chinese acad sci, inst semicond, novel mat ctr, beijing 100083, peoples r china
摘要	Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.
关键词	InGaas Gaas Quantum Dots Infrared Absorption Self-organization X-ray-diffraction Islands Transitions
学科领域	半导体材料
主办者	TMS.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15041
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhuang QD,Li JM,Zeng YP,et al. Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers[C]. 420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA:MINERALS METALS MATERIALS SOC,1999:503-505.

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