Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

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	Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching
	Wang XH; Song AM; Liu J; Cheng WC; Li GH; Li CF; Li YX; Yu JZ; Wang XH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
	1999
会议名称	SPIE Conference on Photonics Technology into the 21st Century - Semiconductors, Microstructures, and Nanostructures
会议录名称	PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899
页码	147-152
会议日期	DEC 01-03, 1999
会议地点	SINGAPORE, SINGAPORE
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3501-5
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.
关键词	Gaas/algaas Quantum Dot Array Etching Method Photoluminescence Wires
学科领域	光电子学
主办者	SPIE.; Nanyang Technol Univ.; SPIE, Singapore Chapter.; Inst Phys.; USAF, Asian Off Aerosp Res & Dev.; USA, Res Off Far E.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13751
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang XH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang XH,Song AM,Liu J,et al. Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1999:147-152.

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