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Design of spectrometer based on volume phase grating for near infrared range 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Li F;  Xin HL;  Cao P;  Liu YL;  Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1245/297  |  提交时间：2010/10/29
Spectrometer  Volume Phase Grating  Optical Design  Resolution  
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM;  Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1602/495  |  提交时间：2010/10/29
Ganas  Sio2 Encapsulation  Rapid-thermal-annealing  Nitrogen Reorganization  Molecular-beam Epitaxy  Optical-properties  Mu-m  
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Xu Y;  Zhu XP;  Ye XJ;  Kang XN;  Cao Q;  Guo L;  Chen LH;  Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)  |  收藏  |  浏览/下载：1689/645  |  提交时间：2010/10/29
Finite-difference Methods  Algainp Laser Diodes  Risa  Operation  Layer  Nm  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1497/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：1482/329  |  提交时间：2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:  Luo XH;  Wang RM;  Zhang XP;  Zhang HZ;  Yu DP;  Luo MC;  Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)  |  收藏  |  浏览/下载：1385/365  |  提交时间：2010/10/29
Transmission Electron Microscopy  Electron Energy Loss Spectroscopy  Molecular Beam Epitaxy  Gallium Nitride  Chemical-vapor-deposition  Epitaxy  Layer  
Microorganisms linked to Neoproterozoic microspar carbonate sedimentation in the Jilin-Liaoning area 会议论文
ACTA GEOLOGICA SINICA-ENGLISH EDITION, 78 (3), Florence, ITALY, 2004
作者:  Ge M;  Kuang HW;  Meng XH;  Furniss G;  Ge M Chinese Acad Sci Inst Semicond Basin Xueyuan Rd Beijing 100083 Peoples R China. 电子邮箱地址: geming@cugb.edu.cn
Adobe PDF(439Kb)  |  收藏  |  浏览/下载：1010/207  |  提交时间：2010/10/29
Molar Tooth Carbonate  Neoproterozoic  Sedimentary Environment  Microorganisms  Origin  Proterozoic Belt Supergroup  Tooth Calcite Structures  Expansion Crack Origin  Purcell Supergroup  Western Montana  Gas Bubble  
Annealing ambient controlled deep defect formation in InP 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)  |  收藏  |  浏览/下载：1408/301  |  提交时间：2010/10/29
Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1209/244  |  提交时间：2010/10/29
Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances  
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Xin HL;  Li F;  Cao P;  He YJ;  Chen P;  Liu YL;  Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)  |  收藏  |  浏览/下载：1194/196  |  提交时间：2010/10/29
Ocpm  Vphg  Incident Angle  Tolerance