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无权访问的条目 期刊论文
Authors:  Wang HL;  Yang FH;  Feng SL;  Zhu HJ;  Ning D;  Wang H;  Wang XD;  Feng SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
Authors:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
无权访问的条目 期刊论文
Authors:  Zhao Q;  Feng SL;  Ning D;  Zhu HJ;  Wang ZM;  Deng YM;  Feng SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots 会议论文
PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 98 (19), BOSTON, MA, NOV 02-05, 1998
Authors:  Zhu HJ;  Wang ZM;  Sun BQ;  Feng SL;  Jiang DS;  Zheng HZ;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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无权访问的条目 期刊论文
Authors:  Zhu HJ;  Feng SL;  Jiang DS;  Deng YM;  Wang HL;  Zhu HJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(62Kb)  |  Favorite  |  View/Download：1966/857  |  Submit date：2010/08/12