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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科学... [1]
半导体材料科学中心 [1]
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Patent [1]
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2015 [1]
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VGF-Ge单晶衬底完整性、复合缺陷及其对多结电池性能的影响
学位论文
, 北京: 中国科学院研究生院, 2015
Authors:
曹可慰
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Submit date：2015/12/08
锗
单晶
垂直梯度凝固
多结电池
热施主
偏[111]晶向锗单晶片位错显示用腐蚀液及腐蚀方法
专利
专利类型: 发明, 公开日期: 2016-09-22
Inventors:
曹可慰
;
赵有文
Adobe PDF(1374Kb)
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Submit date：2016/09/22
