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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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半导体集成技术工程研... [1]
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李艳 [1]
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以光刻胶为掩膜对二氧化硅进行深刻蚀的方法
专利
专利类型: 发明, 专利号: CN200910081225.3, 公开日期: 2011-08-31
Inventors:
李艳
;
杨富华
;
裴为华
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Submit date：2011/08/31
