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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [1]
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Patent [1]
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2004 [1]
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中文 [1]
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无破坏性检测高电子迁移率晶体管外延材料性能的方法
专利
专利类型: 发明, 申请日期: 2004-10-06, 公开日期: 2009-06-04, 2009-06-11
Inventors:
崔利杰
;
曾一平
;
王保强
;
朱战平
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Submit date：2009/06/11
