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Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1585/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
VCSEL based optoelectronic multiple chip modules 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Chen HD;  Liang K;  Du Y;  Huang YZ;  Tiang J;  Ma XY;  Wu RH;  Li SY;  Guo WL;  Xu GJ;  Wang Y;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1352/289  |  提交时间：2010/10/29
Vcsel  Photodetector  Cmos  Mcm  Optoelectronic Integration  Optical Interconnects  Surface-emitting Lasers  Mqw Modulators  Integration  Circuits  Vlsi  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1309/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1318/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文
1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, SHATIN, HONG KONG, 36337
作者:  Wang ZG;  Liang JB;  Qian G;  Xu B;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1030/176  |  提交时间：2010/10/29
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Zhou W;  Xu B;  Xu HZ;  Liu FQ;  Liang JB;  Wang ZG;  Zhu ZZ;  Li GH;  Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(214Kb)  |  收藏  |  浏览/下载：1393/231  |  提交时间：2010/11/15
Bimodal Distribution  Photoluminescence (Pl)  Quantum-size Effect  Ge  Ensembles  Si(100)  Growth  Shape  
Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Gong Q;  Liang JB;  Xu B;  Wang ZG;  Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：936/177  |  提交时间：2010/10/29
Threshold  Operation  Layer  
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
NITRIDE SEMICONDUCTORS, 482, BOSTON, MA, DEC 01-05, 1997
作者:  Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW;  Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：936/211  |  提交时间：2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1295/301  |  提交时间：2010/11/15
Znse/gaas Interface  States