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Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:  Zhao C;  Chen YH;  Sun J;  Lei W;  Cui CX;  Yu LK;  Li K;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(3368Kb)  |  收藏  |  浏览/下载：1606/327  |  提交时间：2010/03/29
Monte Carlo Simulation  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1419/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1361/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Lei ZL;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1184/233  |  提交时间：2010/10/29
The SPER and characteristics of Si1-yCy alloys 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu Z;  Yu JZ;  Cheng BW;  Lei ZL;  Li DZ;  Wang QM;  Liang JW;  Yu Z Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1285/206  |  提交时间：2010/10/29
Si1-ycy Alloys  Ion implantatIon  Solid Phase Epitaxy Recrystallization  
Preparation and photoluminescence of nc-Si/SiO2 MQW 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Cheng BW;  Yu JZ;  Yu Z;  Lei ZL;  Li DZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(416Kb)  |  收藏  |  浏览/下载：1320/350  |  提交时间：2010/10/29