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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [1]
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2002 [1]
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采用TEOS源PECVD生长氧化硅厚膜的方法
专利
专利类型: 发明, 申请日期: 2002-03-27, 公开日期: 2009-06-04, 2009-06-11
Inventors:
雷红兵
;
王红杰
;
胡雄伟
;
邓晓清
;
王启明
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Submit date：2009/06/11
