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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [2]
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Patent [2]
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2005 [2]
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中文 [2]
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一种在硅衬底上生长高质量氮化铝的方法
专利
专利类型: 发明, 申请日期: 2005-12-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:
张南红
;
王晓亮
;
曾一平
;
肖红领
;
王军喜
;
刘宏新
;
李晋闽
Adobe PDF(302Kb)
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View/Download：1574/213
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Submit date：2009/06/11
生长高结晶质量氮化铟单晶外延膜的方法
专利
专利类型: 发明, 申请日期: 2005-12-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:
肖红领
;
王晓亮
;
王军喜
;
张南红
;
刘宏新
;
曾一平
Adobe PDF(404Kb)
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View/Download：1332/177
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Submit date：2009/06/11
