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折射面入光探测器的制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2009-12-23, 2010-08-12
Inventors:  廖栽宜;  张云霄;  周 帆;  赵玲娟;  王 圩
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无权访问的条目 期刊论文
Authors:  Ma SS (Ma Shan-Shan);  Wang, BR (Wang Bao-Rui);  Sun BQ (Sun Bao-Quan);  Wu DH (Wu Dong-Hai);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Ma, SS, Chinese Acad Sci, SKLSM, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Iqbal J;  Liu XF;  Majid A;  Yu DP;  Yu RH;  Iqbal J Tsinghua Univ Dept Mat Sci & Engn Adv Mat Lab Beijing 100084 Peoples R China. E-mail Address: javedsaggu73@yahoo.com;  rhyu@tsinghua.edu.cn
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无权访问的条目 期刊论文
Authors:  Sun LL;  Yan FW;  Wang JX;  Zhang HX;  Zeng YP;  Wang GH;  Li JM;  Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn
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AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  刘乃鑫
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无权访问的条目 期刊论文
Authors:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Majid A;  Sharif R;  Zhu JJ;  Ali A;  Majid A Quaid I Azam Univ Dept Phys Adv Mat Phys Lab Islamabad Pakistan. E-mail Address: abdulmajid40@yahoo.com;  akbar@qau.edu.pk
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GaN/AlN多量子阱MOCVD生长及特性研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  马志芳
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与GaN晶格匹配的AlInN材料的MOCVD生长及其性质研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  卢国军
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无权访问的条目 期刊论文
Authors:  Lu J;  Meng HJ;  Deng JJ;  Xu PF;  Chen L;  Zhao JH;  Jia QJ;  Zhao JH Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jhzhao@red.semi.ac.cn
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