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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1655/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文
PHYSICA E, 2 (1-4), SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997
作者:  Wang YJ;  Nickel HA;  McCombe BD;  Peeters FM;  Shi JM;  Hai GQ;  Wu XG;  Eustis TJ;  Schaff W;  Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
Adobe PDF(116Kb)  |  收藏  |  浏览/下载：1388/186  |  提交时间：2010/11/15
Resonant Magnetopolaron Effects  Gaas/algaas Quantum Well Structures  Interface Phonons  Electron-optical-phonon Interaction  Polaron-cyclotron-resonance  Phonon Modes  Gaas  Heterostructures  Superlattices  Electrons