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1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文
THIN SOLID FILMS, Awaji Isl, JAPAN, MAY 23-26, 2005
Authors:  Yu, J;  Kasper, E;  Oehme, M;  Kasper, E, Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
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Sige  
Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Zhao, YW (Zhao, Y. W.);  Dong, ZY (Dong, Z. Y.);  Deng, AH (Deng, A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Indium Phosphide  
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
Authors:  Liu, Z;  Wang, JX;  Wang, XL;  Hu, GX;  Guo, LC;  Liu, HX;  Li, JP;  Li, JM;  Zeng, YP;  Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
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Surface Morphology  
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
Authors:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Yang, ZX;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Indium Phosphide