SEMI OpenIR

浏览/检索结果: 共3条,第1-3条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载:1581/301  |  提交时间:2010/03/09
Rce- P-i-n-pd  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载:1522/372  |  提交时间:2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Magnetic properties of ZnO-doped cobalt ferrite 会议论文
JOURNAL OF ELECTROCERAMICS, Hangzhou, PEOPLES R CHINA, JUN 27-30, 2005
作者:  Zhou, JP;  Shi, Z;  He, HC;  Nan, CW;  Nan, CW, Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China.
Adobe PDF(260Kb)  |  收藏  |  浏览/下载:1737/399  |  提交时间:2010/03/09
Cofe2o4