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一种平面微腔增强型探测器及其使用方法 专利
专利类型: 发明, 申请日期: 2001-10-24, 公开日期: 2009-06-04, 2009-06-11
发明人:  郑厚植;  杨富华;  赵建华;  曾一平;  陈京好;  谭平恒
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：1155/197  |  提交时间：2009/06/11
一种制备半导体衬底的方法 专利
专利类型: 发明, 申请日期: 2001-04-04, 公开日期: 2009-06-04, 2009-06-11
发明人:  杨沁清;  李成;  欧海燕;  王红杰;  王启明
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1219/163  |  提交时间：2009/06/11
无权访问的条目 期刊论文
作者:  Xu SJ;  Or CT;  Li Q;  Zheng LX;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
Adobe PDF(89Kb)  |  收藏  |  浏览/下载：956/295  |  提交时间：2010/08/12
A novel high sensitivity CE-PTHPT for optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Guohui L;  Yang R;  Dejun H;  Chengzhou J;  Shucheng D;  Eenjun Z;  YiPing Z;  Junming Z;  Guohui L Beijing Normal Univ Inst Low Energy Nucl Phys Key Lab Beam Technol & Mat Modificat Beijing 100875 Peoples R China.
Adobe PDF(58Kb)  |  收藏  |  浏览/下载：1331/351  |  提交时间：2010/10/29
Phototransistors  Optical Fiber Communication  Gaas  Inp  Heterojunction Phototransistor  High-gain  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1656/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering 会议论文
CHINESE PHYSICS, 10, BEIJING, PEOPLES R CHINA, OCT 30-NOV 02, 2000
作者:  Liu JW;  Xie FQ;  Zhong DY;  Wang EG;  Liu WX;  Li SF;  Yang H;  Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
收藏  |  浏览/下载：907/0  |  提交时间：2010/11/15
Luminescence  Sic  Nanocrystalline Film  Rf Sputtering  Raman-scattering  
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Xu SJ;  Or CT;  Li Q;  Zheng LX;  Xie MH;  Tong SY;  Yang H;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(89Kb)  |  收藏  |  浏览/下载：1250/331  |  提交时间：2010/11/15
Optical-transitions  Photoluminescence  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1284/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
无权访问的条目 期刊论文
作者:  Liu JW;  Xie FQ;  Zhong DY;  Wang EG;  Liu WX;  Li SF;  Yang H;  Liu JW,Chinese Acad Sci,Inst Phys,State Key Lab Surface Phys,POB 603,Beijing 100080,Peoples R China.
Adobe PDF(239Kb)  |  收藏  |  浏览/下载：888/304  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Zheng XH;  Qu B;  Wang YT;  Dai ZZ;  Han JY;  Yang H;  Liang JW;  Zheng XH,Chinese Acad Sci,Inst Semicond,R&D Ctr Optoelec Technol,POB 912,Beijing 100093,Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1956/339  |  提交时间：2010/08/12