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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1926/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)  |  收藏  |  浏览/下载：1891/335  |  提交时间：2010/03/09
Molecular-beam Epitaxy  
High polarization single dipole mode photonic crystal microlaser 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 843-844 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Chen W (Chen Wei);  Xing MX (Xing Mingxin);  Zhou WJ (Zhou Wenjun);  Liu AJ (Liu Anjin);  Chen LH (Chen Lianghui);  Zheng WH (Zheng Wanhua)
Adobe PDF(226Kb)  |  收藏  |  浏览/下载：1533/250  |  提交时间：2011/07/14