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Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Ma ZX;  Liao XB;  Zheng WM;  Yu J;  Chu JH;  Ma ZX Chinese Acad Sci Inst Semicond Ctr Fis Mat Condensada State Key Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：3417/1023  |  提交时间：2010/10/29
Nanocrystalline Silicon  Raman Scattering  Infrared Absorption  Phonon Confinement  Microcrystalline Silicon  Polycrystalline Silicon  Films  
An investigation on fiber coupled polymer waveguide for electro-optic modulator 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Yang XH;  Du Y;  Yin AM;  Shi ZW;  Wu RH;  Li Z;  Zhou JY;  Zhao YX;  Shen YQ;  Yang XH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1605/434  |  提交时间：2010/10/29
Polymer  Dispersion  Waveguide  Mismatch Loss  Effective Index  Fiber Coupling  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：1162/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors 会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:  Li C;  Yang QQ;  Ou HY;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1578/439  |  提交时间：2010/10/29
Mirrors  
Si-based resonant-cavity-enhanced photodetector 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1641/208  |  提交时间：2010/11/15
Rce Photodetector  Sige/si  Simox  Bragg Reflector  Top-illumination  Bottom-illumination  Responsivity Spectra  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1549/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1490/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Electronic characteristics of InAs self-assembled quantum dots 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:  Wang HL;  Feng SL;  Zhu HJ;  Ning D;  Chen F;  Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)  |  收藏  |  浏览/下载：1212/237  |  提交时间：2010/11/15
Inas/gaas Quantum Dots  Self-assembled Structure  Dlts  Pl  Band Offset  Energy-levels  Carrier Relaxation  Spectroscopy  
Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Xia JB;  Cheah KW;  Wang XL;  Sun DZ;  Kong MY;  Xia JB Hong Kong Bapitst Univ Dept Phys Hong Kong Hong Kong Peoples R China.
Adobe PDF(79Kb)  |  收藏  |  浏览/下载：1517/330  |  提交时间：2010/11/15
Acceptor Binding Energy  Hole Effective-mass Hamiltonian  Wurtzite Gan  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)  |  收藏  |  浏览/下载：1154/186  |  提交时间：2010/11/15
Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy