中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共1条，第1-1条 帮助

已选(0)清除 条数/页：   排序方式：
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1893/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic