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Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)  |  收藏  |  浏览/下载：1783/383  |  提交时间：2010/03/29
Encapsulated Czochralski Inp  Semiconductor Compound-crystals  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Deep-level Defects  Annealing Ambient  Point-defects  Fe  Phosphide  Donors  
无权访问的条目 期刊论文
作者:  Zhao YW;  Dong HW;  Jiao JH;  Zhao JQ;  Lin LY;  Zhao YW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(64Kb)  |  收藏  |  浏览/下载：1046/322  |  提交时间：2010/08/12