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低维金属硫族化合物的制备与光电性质研究 学位论文
, 北京: 中国科学院研究生院, 2015
作者:  范超
Adobe PDF(5145Kb)  |  收藏  |  浏览/下载：1455/38  |  提交时间：2015/05/26
低维金属硫族化合物  水热法  Cvd法  Mose2  Mos2  Sns2  
无权访问的条目 期刊论文
作者:  Zhao L;  Diao HW;  Zeng XB;  Zhou CL;  Li HL;  Wang WJ;  Zhao, L, Chinese Acad Sci, Inst Elect Engn, Solar Cell Technol Grp, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China. E-mail Address: zhaolei@mail.iee.ac.cn
Adobe PDF(261Kb)  |  收藏  |  浏览/下载：3548/720  |  提交时间：2010/04/04
无权访问的条目 期刊论文
作者:  Xue HY (Xue Hai-Yun);  Xue CL (Xue Chun-Lai);  Cheng BW (Cheng Bu-Wen);  Yu YD (Yu Yu-De);  Wang QM (Wang Qi-Ming);  Xue, HY, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xuehy@semi.ac.cn;  cbw@semi.ac.cn
Adobe PDF(427Kb)  |  收藏  |  浏览/下载：1137/245  |  提交时间：2010/11/01
无权访问的条目 期刊论文
作者:  Li, J;  Wang, RZ;  Lan, W;  Zhang, XW;  Duan, ZQ;  Wang, B;  Yan, H;  Li, J, Beijing Univ Technol, Coll Mat Sci & Engn, Lab Thin Film Mat, Beijing 100124, Peoples R China. 电子邮箱地址: wrz@bjut.edu.cn
Adobe PDF(2159Kb)  |  收藏  |  浏览/下载：923/216  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Gu JH (Gu Jinhua);  Zhu MF (Zhu Meifang);  Wang LJ (Wang Liujiu);  Liu FZ (Liu Fengzhen);  Zhou BQ (Zhou Bingqing);  Ding K (Ding Kun);  Li GH (Li Guohua);  Zhu, MF, Chinese Acad Sci, Grad Sch, Coll Phys Sci, POB 4588, Beijing 100049, Peoples R China. E-mail: mfzhu@gucas.ac.cn
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：1040/332  |  提交时间：2010/04/11
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1535/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1831/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1619/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd  
无权访问的条目 期刊论文
作者:  Wang LJ;  Zhu MF;  Liu FZ;  Liu JL;  Han YQ;  Wang LJ,Chinese Acad Sci,Dept Phys,Grad Sch,Beijing 100039,Peoples R China.
Adobe PDF(216Kb)  |  收藏  |  浏览/下载：922/241  |  提交时间：2010/08/12
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:  Sun GS;  Luo MC;  Wang L;  Zhu SR;  Li JM;  Zeng YP;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)  |  收藏  |  浏览/下载：1672/300  |  提交时间：2010/11/15
3c-sic  In-situ Doping  Low-pressure Cvd  Sapphire Substrate  Chemical-vapor-deposition  Competition Epitaxy