| AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者: Tang J; Wang XL; Chen TS; Xiao HL; Ran JX; Zhang ML ; Hu GX; Feng C; Hou QF; Wei M; Li JM; Wang ZG; Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Algan/gan Hemts |
