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用于氮化物外延生长的纳米级图形衬底的制作方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
发明人:  闫发旺;  高海永;  樊中朝;  李晋闽;  曾一平;  王国宏;  张会肖;  王军喜;  张扬
Adobe PDF(556Kb)  |  收藏  |  浏览/下载:1770/269  |  提交时间:2009/06/11
一种利用图形化衬底提高GaN基LED发光效率的方法 专利
专利类型: 发明, 申请日期: 2009-01-14, 公开日期: 2009-06-04, 2009-06-11
发明人:  闫发旺;  高永海;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
Adobe PDF(526Kb)  |  收藏  |  浏览/下载:1686/272  |  提交时间:2009/06/11
无权访问的条目 期刊论文
作者:  Han Chunlin;  Chen Chen;  Zou Penghui;  Zhang Yang;  Zeng Yiping;  Xue Fangshi;  Gao Jianfeng;  Zhang Zheng;  Geng Tao
Adobe PDF(546Kb)  |  收藏  |  浏览/下载:1134/352  |  提交时间:2010/11/23
无权访问的条目 期刊论文
作者:  Li Weiwei;  Zhao Youwen;  Dong Zhiyuan;  Yang Jun;  Hu Weijie;  Ke Jianhong;  Huang Yan;  Gao Zhenhua
Adobe PDF(245Kb)  |  收藏  |  浏览/下载:1101/346  |  提交时间:2010/11/23
用于氮化物外延生长的图形蓝宝石衬底的制作方法 专利
专利类型: 发明, 申请日期: 2008-12-24, 公开日期: 2009-06-04, 2009-06-11
发明人:  闫发旺;  高海永;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
Adobe PDF(447Kb)  |  收藏  |  浏览/下载:1658/270  |  提交时间:2009/06/11
高晶体质量氮化物外延生长所用图形衬底的制备方法 专利
专利类型: 发明, 申请日期: 2008-10-29, 公开日期: 2009-06-04, 2009-06-11
发明人:  张扬;  闫发旺;  高海永;  曾一平;  王国宏;  张会肖;  李晋闽
Adobe PDF(561Kb)  |  收藏  |  浏览/下载:3004/218  |  提交时间:2009/06/11
无权访问的条目 期刊论文
作者:  Zhang, Y;  Han, CL;  Gao, JF;  Zhu, ZP;  Wang, BQ;  Zeng, YP;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: zhang_yang@semi.ac.cn
Adobe PDF(156Kb)  |  收藏  |  浏览/下载:1048/250  |  提交时间:2010/03/08
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载:3111/891  |  提交时间:2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Gao, HY;  Yan, FW;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)  |  收藏  |  浏览/下载:3055/842  |  提交时间:2010/03/09
Pyramidal Patterned Substrate  Ingan/gan  Light-emitting Diode  Wet Etching  
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)  |  收藏  |  浏览/下载:3805/1292  |  提交时间:2010/03/09
Gan  Nitrides  Led  Mocvd  Patterned Sapphire Substrate  Wet Etching