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Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1470/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1263/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1400/273  |  提交时间：2010/03/29
Avalanche Photodiodes  Area  
无权访问的条目 期刊论文
作者:  Ma WQ (Ma W. Q.);  Sun YW (Sun Y. W.);  Yang XJ (Yang X. J.);  Jiang DS (Jiang D. S.);  Chen LH (Chen L. H.);  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wqma@semi.ac.cn
Adobe PDF(528Kb)  |  收藏  |  浏览/下载：1042/292  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1168/503  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Zhao C (Zhao C.);  Chen YH (Chen Y. H.);  Zhao M (Zhao Man);  Zhang CL (Zhang C. L.);  Xu B (Xu B.);  Yu LK (Yu L. K.);  Sun J (Sun J.);  Lei W (Lei W.);  Wang ZG (Wang Z. G.);  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：929/292  |  提交时间：2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1364/281  |  提交时间：2010/03/29
4h-sic  
电吸收调制器的光纤对准耦合方法 专利
专利类型: 发明, 申请日期: 2002-07-31, 公开日期: 2009-06-04, 2009-06-11
发明人:  孙洋;  陈娓兮;  王圩
Adobe PDF(202Kb)  |  收藏  |  浏览/下载：1291/181  |  提交时间：2009/06/11
无权访问的条目 期刊论文
作者:  薛俊明;  刘志钢;  孙钟林;  周伟;  赵颖;  吴春亚;  李桂华
Adobe PDF(388Kb)  |  收藏  |  浏览/下载：787/224  |  提交时间：2010/11/23
无权访问的条目 期刊论文
作者:  张旺;  李国华;  朱作明;  陈晔;  韩和相;  汪兆平;  周伟;  孙中哲
Adobe PDF(232Kb)  |  收藏  |  浏览/下载：1269/444  |  提交时间：2010/11/23