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Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)  |  收藏  |  浏览/下载：1891/335  |  提交时间：2010/03/09
Molecular-beam Epitaxy  
无权访问的条目 期刊论文
作者:  Yu, LK;  Xu, B;  Wang, ZG;  Jin, P;  Zhao, C;  Lei, W;  Sun, J;  Hu, LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yulike@rcd.semi.ac.cn
Adobe PDF(906Kb)  |  收藏  |  浏览/下载：1179/260  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhao, C;  Chen, YH;  Xu, B;  Tang, CG;  Wang, ZG;  Ding, F;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：926/288  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Li J;  Fang, GJ;  Li C;  Yuan, LY;  Ai L;  Liu NS;  Zhao DS;  Ding K;  Li GH;  Zhao XZ;  Fang, GJ, Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Sch Phys Sci & Technol, Wuhan 430072, Peoples R China. 电子邮箱地址: gjfang@whu.edu.cn
Adobe PDF(394Kb)  |  收藏  |  浏览/下载：1278/403  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhao C;  Chen YH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(278Kb)  |  收藏  |  浏览/下载：1110/379  |  提交时间：2010/03/29
Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:  Zhao C;  Chen YH;  Sun J;  Lei W;  Cui CX;  Yu LK;  Li K;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(3368Kb)  |  收藏  |  浏览/下载：1620/327  |  提交时间：2010/03/29
Monte Carlo Simulation  
无权访问的条目 期刊论文
作者:  Sun, J;  Zhou, DY;  Li, RY;  Zhao, C;  Ye, XL;  Xu, B;  Chen, YH;  Wang, ZG;  Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: albertjefferson@sohu.com
Adobe PDF(479Kb)  |  收藏  |  浏览/下载：1093/268  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Lu, X;  Han, P;  Quan, Y;  Ran, Q;  Gao, L;  Zeng, F;  Zhao, C;  Yu, J;  Lu, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optelect, Beijing, Peoples R China. 电子邮箱地址: lxd2211@sina.com
Adobe PDF(1371Kb)  |  收藏  |  浏览/下载：897/247  |  提交时间：2010/03/08
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1377/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1165/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth